SX1211
WIRELESS & SENSING
2. Electrical Characteristics
2.1. ESD Notice
The SX1211 is a high performance radio frequency device. It satisfies:
Class 2 of the JEDEC standard JESD22-A114-B (Human Body Model), except on pins 3-4-5-27-28-29-31
where it satisfies Class 1A.
Class III of the JEDEC standard JESD22-C101C (Charged Device Model) on all pins.
It should thus be handled with all the necessary ESD precautions to avoid any permanent damage.
2.2. Absolute Maximum Ratings
Stresses above the values listed below may cause permanent device failure. Exposure to absolute maximum
ratings for extended periods may affect device reliability.
Table 3: Absolute Maximum Ratings
Symbol
VDDmr
Tmr
Pmr
Description
Supply voltage
Storage temperature
Input level
Min
-0.3
-55
-
Max
3.7
125
0
Unit
V
°C
dBm
2.3. Operating Range
Table 4: Operating Range
Symbol
VDDop
Trop
ML
Description
Supply Voltage
Temperature
Input Level
Min
2.1
-40
-
Max
3.6
+85
0
Unit
V
°C
dBm
2.4. Chip Specification
Conditions: Temp = 25 °C, VDD = 3.3 V, crystal frequency = 12.8 MHz, carrier frequency = 869 or 915 MHz,
modulation FSK, data rate = 25 kb/s, Fdev = 50 kHz, fc = 100 kHz, unless otherwise specified.
Note: RF performance depends on assembly. Electrical specifications listed in this section are obtained with the
TQFN package described in section 8 “Packaging Information”.
2.4.1. Power Consumption
Table 5: Power Consumption Specification
Symbol
IDDSL
Description
Supply current, Sleep mode
Conditions
Min
-
Typ
0.1
Max
2
Unit
μA
IDDST
IDDFS
IDDR
Supply current in standby
mode, CLKOUT disabled
Supply current in FS mode
Supply current in Rx mode
Crystal oscillator running
Frequency synthesizer
running
(2)
-
-
-
65
1.3
3.0
80
1.7
3.5
μA
mA
mA
IDDT
Supply current in Tx mode
Output power = +10 dBm
Output power = 1dBm (1)
-
-
25
16
30
21
mA
mA
Rev 8 – February 2013
Page 8 of 92
www.semtech.com
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